Micross Components, Inc. is excited to announce the expansion of its MRAM product offering with the introduction of a Ceramic Column Grid Array (CCGA) package. This new package option is designed to enhance thermal stress resistance and electro-mechanical performance for Space applications, making it an ideal solution for high-reliability aerospace, defense, and industrial applications.
The CGA package is compatible with Micross’ 1Gb and 4Gb Parallel Spin-Torque MRAM product variants, which are based on a cutting-edge 22nm Gen-3 pMTJ STT-MRAM process node topology. This technology, licensed from IBM, ensures robust thermal shock survivability and reliability for Hermetic fine pitch packages.
Micross’ Space Grade 1Gb Spin Transfer Torque MRAM device offers unparalleled performance and ruggedization, with true random READ and WRITE access within the memory array. This device is based on a 22nm Gen-3 pMTJ STT-MRAM process node topology, making it highly resistant to magnetic flux and eliminating the need for additional shielding. The device architecture is similar to Flash technology with an SRAM-compatible interface, enhanced by an Asynchronous Page Mode feature for improved performance.
Perpendicular Spin-Torque MRAM devices, like the ones offered by Micross and Avalanche, provide superior protection in harsh environments and boast the best power profile among non-volatile memories. These devices are perfectly suited for aerospace and space applications, offering a compact, low-power memory solution.
The Ceramic Column Grid Array package is particularly effective in mitigating CTE mismatches and improving survivability in high shock and vibration environments. Micross’ licensed CLASP column attach process ensures a high-quality attachment to the parent Land Grid package, facilitating potential Printed Wiring Assembly rework if needed.
The latest addition to Micross’ MRAM family is the Spin-Torque, Persistent MRAM 1Gb, 32M x 32, which offers Space and Military QML quality flows in two hermetic 18mm x 20mm package variants. This product features near infinite endurance, 10-year data retention, and a wide operating temperature range, making it ideal for demanding military applications.
As Micross continues to expand its MRAM technology solutions, customers can expect additional CGA options across the full product family. The company is committed to researching next-generation solder column materials and attachment processes to deliver feature-rich, robust memory solutions for next-generation Space and Deep Space flight requirements.
For more information about Micross MRAM products, please visit http://www.micross.com/products-and-services/hi-rel-ics-components/memory. Stay updated on the latest news and developments by following Micross on LinkedIn.
For more information about Avalanche Technology and their next-generation Perpendicular STT-MRAM technology, visit their website at https://www.avalanche-technology.com. Avalanche Technology is leading the way in replacing traditional Flash and SRAM technologies with high-performance, low-power MRAM solutions for future SOC systems.
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